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? semiconductor components industries, llc, 2002 may, 2002 rev. 13 publication order number: mun2111t1/d 1 mun2111t1 series preferred devices bias resistor transistors pnp silicon surface mount transistors with monolithic bias resistor network this new series of digital transistors is designed to replace a single device and its external resistor bias network. the brt (bias resistor transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. the brt eliminates these individual components by integrating them into a single device. the use of a brt can reduce both system cost and board space. the device is housed in the sc59 package which is designed for low power surface mount applications. ? simplifies circuit design ? reduces board space ? reduces component count ? moisture sensitivity level: 1 ? esd rating human body model: class 1 esd rating machine model: class b ? the sc59 package can be soldered using wave or reflow. the modified gullwinged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. ? available in 8 mm embossed tape and reel use the device number to order the 7 inch/3000 unit reel. maximum ratings (t a = 25 c unless otherwise noted) rating symbol value unit collector-base voltage v cbo 50 vdc collector-emitter voltage v ceo 50 vdc collector current i c 100 madc thermal characteristics characteristic symbol max unit total device dissipation t a = 25 c derate above 25 c p d 230 (note 1) 338 (note 2) 1.8 (note 1) 2.7 (note 2) mw c/w thermal resistance junction-to-ambient r q ja 540 (note 1) 370 (note 2) c/w thermal resistance junction-to-lead r q jl 264 (note 1) 287 (note 2) c/w junction and storage temperature range t j , t stg 55 to +150 c 1. fr4 @ minimum pad 2. fr4 @ 1.0 x 1.0 inch pad sc59 case 318d plastic marking diagram pin 3 collector (output) pin 1 emitter (ground) pin 2 base (input) r1 r2 2 1 3 6x m see detailed ordering and shipping information on page 2 of this data sheet. ordering information *see device marking table on page 2 of this data sheet. device marking information preferred devices are recommended choices for future use and best overall value. 6x = specific device code* m = date code http://onsemi.com
mun2111t1 series http://onsemi.com 2 device marking and resistor values device package marking r1 (k) r2 (k) shipping mun2111t1 sc59 6a 10 10 3000/tape & reel mun2112t1 sc59 6b 22 22 3000/tape & reel mun2113t1 sc59 6c 47 47 3000/tape & reel mun2114t1 sc59 6d 10 47 3000/tape & reel mun2115t1 (note 3) sc59 6e 10 3000/tape & reel mun2116t1 (note 3) sc59 6f 4.7 3000/tape & reel mun2130t1 (note 3) sc59 6g 1.0 1.0 3000/tape & reel mun2131t1 (note 3) sc59 6h 2.2 2.2 3000/tape & reel mun2132t1 (note 3) sc59 6j 4.7 4.7 3000/tape & reel mun2133t1 (note 3) sc59 6k 4.7 47 3000/tape & reel mun2134t1 (note 3) sc59 6l 22 47 3000/tape & reel mun2136t1 sc59 6n 100 100 3000/tape & reel mun2137t1 sc59 6p 47 22 3000/tape & reel mun2140t1 (note 3) sc59 6t 47 3000/tape & reel electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collectorbase cutoff current (v cb = 50 v, i e = 0) i cbo 100 nadc collectoremitter cutoff current (v ce = 50 v, i b = 0) i ceo 500 nadc emitterbase cutoff current mun2111t1 (v eb = 6.0 v, i c = 0) mun2112t1 mun2113t1 mun2114t1 mun2115t1 mun2116t1 mun2130t1 mun2131t1 mun2132t1 mun2133t1 mun2134t1 mun2136t1 mun2137t1 mun2140t1 i ebo 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.05 0.13 0.20 madc collectorbase breakdown voltage (i c = 10 m a, i e = 0) v (br)cbo 50 vdc collectoremitter breakdown voltage (note 4) (i c = 2.0 ma, i b = 0) v (br)ceo 50 vdc 3. new resistor combinations. updated curves to follow in subsequent data sheets. 4. pulse test: pulse width < 300 m s, duty cycle < 2.0%
mun2111t1 series http://onsemi.com 3 electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit on characteristics (note 5) dc current gain mun2111t1 (v ce = 10 v, i c = 5.0 ma) mun2112t1 mun2113t1 mun2114t1 mun2115t1 mun2116t1 mun2130t1 mun2131t1 mun2132t1 mun2133t1 mun2134t1 mun2136t1 mun2137t1 mun2140t1 h fe 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 120 60 100 140 140 250 250 5.0 15 27 140 130 150 140 250 collectoremitter saturation voltage (i c = 10 ma, i b = 0.3 ma) mun2111t1 mun2112t1 mun2113t1 mun2114t1 mun2115t1 mun2130t1 mun2136t1 mun2137t1 (i c = 10 ma, i b = 5.0 ma) mun2131t1 (i c = 10 ma, i b = 1.0 ma) mun2116t1 mun2132t1 mun2134t1 mun2140t1 v ce(sat) 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 vdc output voltage (on) (v cc = 5.0 v, v b = 2.5 v, r l = 1.0 k w ) mun2111t1 mun2112t1 mun2114t1 mun2115t1 mun2116t1 mun2130t1 mun2131t1 mun2132t1 mun2133t1 mun2134t1 (v cc = 5.0 v, v b = 3.5 v, r l = 1.0 k w ) mun2113t1 mun2140t1 (v cc = 5.0 v, v b = 5.5 v, r l = 1.0 k w ) mun2136t1 (v cc = 5.0 v, v b = 4.0 v, r l = 1.0 k w ) mun2137t1 v ol 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 vdc 5. pulse test: pulse width < 300 m s, duty cycle < 2.0%
mun2111t1 series http://onsemi.com 4 electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit on characteristics (note 6) (continued) output voltage (off) (v cc = 5.0 v, v b = 0.5 v, r l = 1.0 k w ) (v cc = 5.0 v, v b = 0.050 v, r l = 1.0 k w ) mun2130t1 (v cc = 5.0 v, v b = 0.25 v, r l = 1.0 k w ) mun2115t1 mun2116t1 mun2131t1 mun2132t1 mun2140t1 v oh 4.9 vdc input resistor mun2111t1 mun2112t1 mun2113t1 mun2114t1 mun2115t1 mun2116t1 mun2130t1 mun2131t1 mun2132t1 mun2133t1 mun2134t1 mun2136t1 mun2137t1 mun2140t1 r1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 70 32.9 32.9 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 100 47 47 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 130 61.1 61.1 k w resistor ratio mun2111t1/mun2112t1/mun2113t1/ mun2136t1 mun2114t1 mun2115t1/mun2116t1/mun2140t1 mun2130t1/mun2131t1/mun2132t1 mun2133t1 mun2134t1 mun2137t1 r 1 /r 2 0.8 0.17 0.8 0.055 0.38 1.7 1.0 0.21 1.0 0.1 0.47 2.1 1.2 0.25 1.2 0.185 0.56 2.6 6. pulse test: pulse width < 300 m s, duty cycle < 2.0% figure 1. derating curve 350 200 150 100 50 0 50 0 50 100 150 t a , ambient temperature (5 c) p d, power dissipation (mw) r q ja = 370 c/w 250 300 load +12 v figure 2. inexpensive, unregulated current source typical application for pnp brts
mun2111t1 series http://onsemi.com 5 typical electrical characteristics mun2111t1 i c , collector current (ma) 100 10 1 0.1 0.01 0.001 v in, input voltage (volts) i c, collector current (ma) h fe, dc current gain figure 3. v ce(sat) vs. i c 0 t a = 25 c 25 c 12345 678 910 figure 4. dc current gain figure 5. output capacitance figure 6. output current vs. input voltage figure 7. input voltage vs. output current 0.01 20 0.1 1 0406080 1000 1 10 100 i c , collector current (ma) 100 10 0 i c , collector current (ma) 0.1 1 10 100 10 20 30 40 50 t a = 25 c 75 c 75 c 50 010203040 4 3 1 2 v r , reverse bias voltage (volts) 0 t a =2 5c 25 c 75 c 25 c v ce = 10 v v o = 5 v v in , input voltage (volts) f = 1 mhz l e = 0 v t a = 25 c 25 c v ce(sat), maximum collector voltage (volts) c ob, capacitance (pf) t a =75 c i c /i b = 10 25 c v o = 0.2 v
mun2111t1 series http://onsemi.com 6 typical electrical characteristics mun2112t1 v in, input voltage (volts) i c, collector current (ma) c ob, capacitance (pf) h fe, dc current gain v ce(sat), maximum collector voltage (volts) t a = 25 c figure 8. v ce(sat) vs. i c figure 9. dc current gain 1000 10 i c , collector current (ma) 100 10 1 10 0 t a =75 c figure 10. output capacitance i c , collector current (ma) 010 2030 75 c 100 10 1 0.1 40 50 figure 11. output current vs. input voltage 100 10 1 0.1 0.01 0.001 0 123 4 v in , input voltage (volts) 25 c 5678910 figure 12. input voltage vs. output current 0.01 0.1 1 10 40 i c , collector current (ma) 020 6080 75 c 25 c t a = 25 c 50 010203040 4 3 2 1 0 v r , reverse bias voltage (volts) 25 c v ce = 10 v i c /i b = 10 f = 1 mhz l e = 0 v t a = 25 c v o = 5 v 25 c 75 c 25 c t a = 25 c v o = 0.2 v
mun2111t1 series http://onsemi.com 7 typical electrical characteristics mun2113t1 v in, input voltage (volts) i c, collector current (ma) c ob, capacitance (pf) h fe, dc current gain 25 c figure 13. v ce(sat) vs. i c 1000 100 10 1 10 100 i c , collector current (ma) figure 14. dc current gain i c , collector current (ma) 1 0.1 0.01 010203040 figure 15. output capacitance figure 16. output current vs. input voltage 100 10 1 0.1 0.01 0.001 010 v in , input voltage (volts) 50 010203040 1 0.8 0.6 0.4 0.2 0 v r , reverse bias voltage (volts) 1234 5 6 78 9 figure 17. input voltage vs. output current 100 10 1 0.1 010203040 i c , collector current (ma) 50 t a = 25 c 75 c f = 1 mhz l e = 0 v t a = 25 c v o = 5 v t a =75 c v o = 0.2 v t a =75 c 25 c 25 c 25 c 25 c i c /i b =10 25 c 75 c t a = 25 c v ce(sat), maximum collector voltage (volts)
mun2111t1 series http://onsemi.com 8 typical electrical characteristics mun2114t1 v in, input voltage (volts) i c, collector current (ma) c ob, capacitance (pf) v ce(sat), maximum collector voltage (volts) 10 1 0.1 01020304050 100 10 1 0246810 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 02468101520253035404550 v r , reverse bias voltage (volts) figure 18. v ce(sat) vs. i c i c , collector current (ma) 020406080 figure 19. dc current gain figure 20. output capacitance figure 21. output current vs. input voltage v in , input voltage (volts) figure 22. input voltage vs. output current i c , collector current (ma) 1 0.1 0.01 0.00 1 f = 1 mhz l e = 0 v t a = 25 c t a = 25 c 25 c t a =75 c 25 c v o = 5 v v o = 0.2 v t a = 25 c 25 c 75 c i c /i b =10 110 i c , collector current (ma) 25 c 25 c t a =75 c v ce = 10 v 180 160 140 120 100 80 60 40 20 0 2 4 6 8 15204050 607080 90 100 75 c 25 c h fe, dc current gain
mun2111t1 series http://onsemi.com 9 typical electrical characteristics mun2131t1 figure 23. v ce(sat) vs. i c 75 c i c /i b =10 10 1 0.1 0.01 15 5 020 i c , collector current (ma) v ce(sat), maximum collector voltage (v) 25 35 25 c 25 c 30 figure 24. dc current gain i c /i b = 10 1 1000 100 10 10 100 1 i c , collector current (ma) hfe, dc current gain 75 c 25 c 25 c figure 25. output capacitance 0 8 6 20 4 2 0 v r, reverse bias voltage (v) c ob, capacitance (pf) 10 55 50 40 30 10 12 45 35 25 15 5 f = 1 mhz i e = 0 a t a = 25 c figure 26. output current vs. input voltage 0 100 10 246 1 0.01 0.01 8 v in, input voltage (v) i c , collector current (ma) v o = 5 v 75 c t a = 25 c 25 c 1357 figure 27. input voltage vs. output current v o = 0.2 v 0 10 10 20 25 1 0.1 i c, collector current (ma) t a = 25 c 75 c 25 c 515 vi n, input voltage (volts)
mun2111t1 series http://onsemi.com 10 typical electrical characteristics e mun2136t1 75 c 25 c 25 c figure 28. maximum collector voltage versus collector current figure 29. dc current gain figure 30. output capacitance figure 31. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 32. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 7 6 5 4 3 2 1 0 i c , collector current (ma) 100 10 1 100 10 1 0.01 1000 v ce(sat) , maximum collector voltage (volts) h fe , dc current gain 1.2 0.6 60 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.2 0.4 0.8 1.0 100 6 5 4 3 2 1 0 0.1 1 10 i c , collector current (ma) 10 9 8 7 100 12 10 8 6 4 2 0 1 10 18 16 14 20 v in , input voltage (volts) i c /i b = 10 75 c 25 c t a = 25 c v ce = 10 v 75 c 25 c t a = 25 c v o = 5 v v o = 0.2 v 75 c 25 c t a = 25 c f = 1 mhz i e = 0 v t a = 25 c
mun2111t1 series http://onsemi.com 11 typical electrical characteristics e mun2137t1 figure 33. maximum collector voltage versus collector current figure 34. dc current gain figure 35. output capacitance figure 36. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 37. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 35 30 25 20 15 10 5 0 i c , collector current (ma) 100 10 1 100 10 0.01 1000 v ce(sat) , maximum collector voltage (volts) h fe , dc current gain 1.4 0.6 60 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.2 0.4 0.8 1.0 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 11 9 8 7 100 15 10 5 0 1 10 20 25 v in , input voltage (volts) 50 45 40 0.1 0.01 10 1.2 f = 1 mhz i e = 0 v t a = 25 c 75 c 25 c t a = 25 c v o = 5 v 75 c 25 c t a = 25 c v o = 0.2 v 75 c 25 c t a = 25 c i c /i b = 10 v ce = 10 v 75 c 25 c t a = 25 c
mun2111t1 series http://onsemi.com 12 p d = t j(max) t a r q ja p d = 150 c 25 c 370 c/w = 338 milliwatts ? the soldering temperature and time should not exceed 260 c for more than 10 seconds. ? when shifting from preheating to soldering, the maximum temperature gradient should be 5 c or less. ? after soldering has been completed, the device should be allowed to cool naturally for at least three minutes. gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. ? mechanical stress or shock should not be applied dur- ing cooling * soldering a device without preheating can cause exces- sive thermal shock and stress which can result in damage to the device. information for using the sc59 surface mount package minimum recommended footprint for surface mounted applications surface mount board layout is a critical portion of the total design. the footprint for the semiconductor packages must be the correct size to insure proper solder connection sc59 power dissipation the power dissipation of the sc59 is a function of the pad size. this can vary from the minimum pad size for sol- dering to the pad size given for maximum power dissipa- tion. power dissipation for a surface mount device is deter- mined by t j(max) , the maximum rated junction temperature of the die, r q ja , the thermal resistance from the device junction to ambient; and the operating temperature, t a . us- ing the values provided on the data sheet, p d can be calcu- lated as follows. the values for the equation are found in the maximum ratings table on the data sheet. substituting these values into the equation for an ambient temperature t a of 25 c, one can calculate the power dissipation of the device which in this case is 338 milliwatts. the 370 c/w assumes the use of the recommended foot- print on a glass epoxy printed circuit board to achieve a power dissipation of 338 milliwatts. another alternative would be to use a ceramic substrate or an aluminum core board such as thermal clad ? . using a board material such as thermal clad, the power dissipation can be doubled us- ing the same footprint. interface between the board and the package. with the correct pad geometry, the packages will self align when subjected to a solder reflow process. soldering precautions the melting temperature of solder is higher than the rated temperature of the device. when the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. ? always preheat the device. ? the delta temperature between the preheat and soldering should be 100 c or less.* ? when preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. when using infrared heating with the reflow soldering method, the difference should be a maximum of 10 c. mm inches 0.039 1.0 0.094 0.8 2.4 0.031 0.95 0.037 0.95 0.037
mun2111t1 series http://onsemi.com 13 step 1 preheat zone 1 ramp" step 2 vent soak" step 3 heating zones 2 & 5 ramp" step 4 heating zones 3 & 6 soak" step 5 heating zones 4 & 7 spike" step 6 vent step 7 cooling 200 c 150 c 100 c 50 c time (3 to 7 minutes total) t max solder is liquid for 40 to 80 seconds (depending on mass of assembly) 205 to 219 c peak at solder joint desired curve for low mass assemblies 100 c 150 c 160 c 140 c figure 38. typical solder heating profile desired curve for high mass assemblies 170 c for any given circuit board, there will be a group of control settings that will give the desired heat pattern. the operator must set temperatures for several heating zones, and a figure for belt speed. taken together, these control settings make up a heating aprofileo for that particular circuit board. on machines controlled by a computer, the computer remembers these profiles from one operating session to the next. figure 7 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. this profile will vary among soldering systems but it is a good starting point. factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. this profile shows temperature versus time. solder stencil guidelines prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. a solder stencil is required to screen the optimum amount of solder paste onto the footprint. the stencil is made of brass or stainless steel with a typical thickness of 0.008 inches. the stencil opening size for the surface mounted package should be the same as the pad size on the printed circuit board, i.e., a 1:1 registration. typical solder heating profile the line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. the two profiles are based on a high density and a low density board. the vitronics smd310 convection/infrared reflow soldering system was used to generate this profile. the type of solder used was 62/36/2 tin lead silver with a melting point between 177189 c. when this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. the components on the board are then heated by conduction. the circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints.
mun2111t1 series http://onsemi.com 14 package dimensions sc59 case 318d04 issue f s g h d c b l a 1 3 2 j k dim a min max min max inches 2.70 3.10 0.1063 0.1220 millimeters b 1.30 1.70 0.0512 0.0669 c 1.00 1.30 0.0394 0.0511 d 0.35 0.50 0.0138 0.0196 g 1.70 2.10 0.0670 0.0826 h 0.013 0.100 0.0005 0.0040 j 0.09 0.18 0.0034 0.0070 k 0.20 0.60 0.0079 0.0236 l 1.25 1.65 0.0493 0.0649 s 2.50 3.00 0.0985 0.1181 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. style 1: pin 1. emitter 2. base 3. collector
mun2111t1 series http://onsemi.com 15 notes
mun2111t1 series http://onsemi.com 16 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mun2111t1/d thermal clad is a trademark of the bergquist company. literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada

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